Search Results

Advanced search parameters have been applied.
open access

Device Engineering for Enhanced Efficiency from Platinum(II) Phosphorescent OLEDs

Description: Phosphorescent organic light emitting diodes (PHOLEDs) based on efficient electrophosphorescent dopant, platinum(II)-pyridyltriazolate complex, bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) (Pt(ptp)2) have been studied and improved with respect to power efficiency, external efficiency, chromacity and efficiency roll-off. By studying the electrical and optical behavior of the doped devices and functionality of the various constituent layers, devices with a maximum EQE of 20.8±0.2 % and p… more
Date: August 2010
Creator: Li, Minghang
Partner: UNT Libraries
open access

Carrier Mobility, Charge Trapping Effects on the Efficiency of Heavily Doped Organic Light-Emitting Diodes, and EU(lll) Based Red OLEDs

Description: Transient electroluminescence (EL) was used to measure the onset of emission delay in OLEDs based on transition metal, phosphorescent bis[3,5-bis(2-pyridyl)-1,2,4-triazolato] platinum(ΙΙ) and rare earth, phosphorescent Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) doped into 4,4'-bis(carbazol-9-yl) triphenylamine (CBP), from which the carrier mobility was determined. For the Pt(ptp)2 doped CBP films in OLEDs with the structure: ITO/NPB (40nm)/mcp (10nm)/65% Pt(ptp)2:CBP (2… more
Date: August 2010
Creator: Lin, Ming-Te
Partner: UNT Libraries
open access

Amorphization and De-vitrification in Immiscible Copper-Niobium Alloy Thin Films

Description: While amorphous phases have been reported in immiscible alloy systems, there is still some controversy regarding the reason for the stabilization of these unusual amorphous phases. Direct evidence of nanoscale phase separation within the amorphous phase forming in immiscible Cu-Nb alloy thin films using 3D atom probe tomography has been presented. This evidence clearly indicates that the nanoscale phase separation is responsible for the stabilization of the amorphous phase in such immiscible sy… more
Date: May 2007
Creator: Puthucode Balakrishnan, Anantharamakrishnan
Partner: UNT Libraries
open access

Electrodeposition of Diamond-like Carbon Films

Description: Electrodeposition of diamond-like carbon (DLC) films was studied on different substrates using two different electrochemical methods. The first electrochemical method using a three-electrode system was studied to successfully deposit hydrogenated DLC films on Nickel, Copper and Brass substrates. The as-deposited films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), fourier transform infrared spectroscopy (FTIR) and cyclic vol… more
Date: August 2002
Creator: Chen, Minhua
Partner: UNT Libraries
open access

The Preparation of Thin Films of Plutonium by Electrodeposition

Description: This report discusses methods for preparing thin films of plutonium on metallic disks, which are used for alpha energy analysis, fission counting, and preparation of geometry standards in ordinary counting. Various methods of preparation were tested and analyzed, but electrodeposition was the most effective method. Deposition was then tested, but the yields were "somewhat erratic".
Date: March 22, 1950
Creator: Miller, H. W. & Brouns, R. J.
Partner: UNT Libraries Government Documents Department
open access

Novel Carborane Derived Semiconducting Thin Films for Neutron Detection and Device Applications

Description: Novel carborane (B10C2H12) and aromatic compounds (benzene, pyridine, diaminobenzene) copolymers and composite materials have been fabricated by electron beam induced cross-linking and plasma enhanced chemical vapor deposition (PECVD) respectively. Chemical and electronic structure of these materials were studied using X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS). UPS suggest that the systematic tuning of electronic structure can be achieved by using different aromatic compou… more
Date: August 2015
Creator: James, Robinson
Partner: UNT Libraries
open access

Interfacial Electrochemistry of Cu/Al Alloys for IC Packaging and Chemical Bonding Characterization of Boron Doped Hydrogenated Amorphous Silicon Films for Infrared Cameras

Description: We focused on a non-cooling room temperature microbolometer infrared imaging array device which includes a sensing layer of p-type a-Si:H component layers doped with boron. Boron incorporation and bonding configuration were investigated for a-Si:H films grown by plasma enhanced chemical deposition (PECVD) at varying substrate temperatures, hydrogen dilution of the silane precursor, and dopant to silane ratio using multiple internal reflection infrared spectroscopy (MIR-IR). This study was then … more
Date: May 2016
Creator: Ross, Nick
Partner: UNT Libraries
open access

Stable Nanocrystalline Au Film Structures for Sliding Electrical Contacts

Description: Hard gold thin films and coatings are widely used in electronics as an effective material to reduce the friction and wear of relatively less expensive electrically conductive materials while simultaneously seeking to provide oxidation resistance and stable sliding electrical contact resistance (ECR). The main focus of this dissertation was to synthesize nanocrystalline Au films with grain structures capable of remaining stable during thermal exposure and under sliding electrical contact stress… more
Date: May 2016
Creator: Mogonye, Jon-Erik
Partner: UNT Libraries
open access

Highly Stretchable Miniature Strain Sensor for Large Dynamic Strain Measurement

Description: This thesis aims to develop a new type of highly stretchable strain sensor to measure large deformation of a specimen subjected to dynamic loading. The sensor was based on the piezo-resistive response of carbon nanotube(CNT)/polydimethysiloxane (PDMS) composites thin films, some nickel particles were added into the sensor composite to improve the sensor performance. The piezo-resistive response of CNT composite gives high frequency response in strain measurement, while the ultra-soft PDMS matri… more
Date: May 2016
Creator: Yao, Shulong
Partner: UNT Libraries
open access

Investigation of Post-Plasma Etch Fluorocarbon Residue Characterization, Removal and Plasma-Induced Low-K Damage for Advanced Interconnect Applications

Description: Modern three-dimensional integrated circuit design is rapidly evolving to more complex architecture. With continuous downscaling of devices, there is a pressing need for metrology tool development for rapid but efficient process and material characterization. In this dissertation work, application of a novel multiple internal reflection infrared spectroscopy metrology is discussed in various semiconductor fabrication process development. Firstly, chemical bonding structure of thin fluorocarbon … more
Date: May 2016
Creator: Mukherjee, Tamal
Partner: UNT Libraries
open access

A Novel Process for GeSi Thin Film Synthesis

Description: A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation. A dilute GeSi layer is initially formed by implanting Ge+ into a silicon-on-insulator (SOI) substrate. Thermal oxidation segregates the Ge at the growing oxide interface to form a distinct GexSi1-x … more
Date: December 2007
Creator: Hossain, Khalid
Partner: UNT Libraries
open access

Trapping of hydrogen in Hf-based high κ dielectric thin films for advanced CMOS applications.

Description: In recent years, advanced high κ gate dielectrics are under serious consideration to replace SiO2 and SiON in semiconductor industry. Hafnium-based dielectrics such as hafnium oxides, oxynitrides and Hf-based silicates/nitrided silicates are emerging as some of the most promising alternatives to SiO2/SiON gate dielectrics in complementary metal oxide semiconductor (CMOS) devices. Extensive efforts have been taken to understand the effects of hydrogen impurities in semiconductors and its behavi… more
Date: December 2007
Creator: Ukirde, Vaishali
Partner: UNT Libraries

Preparation and characterization of praseodymium oxide films and powders.

Description: Nanocrystalline praseodymium oxide films have been successfully generated on stainless steel substrates. The electrochemical deposition was performed in the cathode compartment of a divided electrochemical cell with a regular three-electrode configuration. The green films obtained by electrodeposition were then annealed at high temperatures for 1-3 hours. X-ray diffraction revealed the fluorite structure of Pr6O11 and the crystallite size was calculated. X-ray photoelectron spectroscopy was emp… more
Access: Restricted to UNT Community Members. Login required if off-campus.
Date: May 2004
Creator: Shang, Yajuan
Partner: UNT Libraries
open access

Investigation of Structure and Properties of Low Temperature Deposited Diamond-Like Carbon Films

Description: Electrodeposition is a novel method for fabrication of diamond-like carbon (DLC) films on metal substrates. In this work, DLC was electrochemically deposited on different substrates based on an anodic oxidation cyclization of acetylene in liquid ammonia. Successfully anodic deposition was carried out for DLC onto nickel substrate at temperatures below -40°C. Comparative studies were performed on a series of different carbon sources (acetylene, sodium acetylide, and a mixture of acetylene and… more
Date: August 2004
Creator: Pingsuthiwong, Charoendee
Partner: UNT Libraries
open access

Reactivity of Oxide Surfaces and Metal-Oxide Interfaces: Effects of Water Vapor Pressure on Ultrathin Aluminum Oxide Films, and Studies of Platinum Growth Modes on Ultrathin Oxide Films and Their Effects on Adhesion

Description: The reactivity of oxide surfaces and metal-oxide interfaces play an important role in many technological applications such as corrosion, heterogeneous catalysis, and microelectronics. The focus of this research was (1) understanding the effects of water vapor exposure of ultrathin aluminum oxide films under non-ultrahigh vacuum conditions (>10-9 Torr) and (2) characterization of Pt growth modes on ultrathin Ta silicate and silicon dioxide films and the effects of growth modes on adhesion of a … more
Date: May 2004
Creator: Garza, Michelle
Partner: UNT Libraries
open access

Improvement of Homogeneity and Adhesion of Diamond-Like Carbon Films on Copper Substrates

Description: Electrodeposition method is used to deposit diamond-like carbon (DLC) films on copper substrates via anodic oxidation at low temperature. These films are characterized using Raman spectroscopy, Fourier transform infrared spectroscopy and scanning electron microscopy. Homogeneity of these films is studied using Raman spectroscopy and scanning electron microscopy. Scotch tape peel tests indicate adherent film on copper substrate. Carbon phase transformation is studied using thermal annealing expe… more
Date: August 2004
Creator: Vavilala, Suma
Partner: UNT Libraries
open access

Tantalum- and ruthenium-based diffusion barriers/adhesion promoters for copper/silicon dioxide and copper/low κ integration.

Description: The TaSiO6 films, ~8Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates at 300 K, followed by annealing to 600 K in 2 torr O2. X-ray photoelectron spectroscopy (XPS) measurements of the films yielded a Si(2p) binding energy at 102.1 eV and Ta(4f7/2) binding energy at 26.2 eV, indicative of Ta silicate formation. O(1s) spectra indicate that the film is substantially hydroxylated. Annealing the film to > 900 K in UHV resulted in silicate decomposition to SiO2 and Ta2… more
Date: December 2004
Creator: Zhao, Xiaopeng
Partner: UNT Libraries
open access

Characterization of Boron Nitride Thin Films on Silicon (100) Wafer.

Description: Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM technique… more
Date: August 2007
Creator: Maranon, Walter
Partner: UNT Libraries

Electrodeposition of adherent copper film on unmodified tungsten.

Description: Adherent Cu films were electrodeposited onto polycrystalline W foils from purged solutions of 0.05 M CuSO4 in H2SO4 supporting electrolyte and 0.025 M CuCO3∙Cu(OH)2 in 0.32 M H3BO3 and corresponding HBF4 supporting electrolyte, both at pH = 1. Films were deposited under constant potential conditions at voltages between -0.6 V and -0.2 V vs Ag/AgCl. All films produced by pulses of 10 s duration were visible to the eye, copper colored, and survived a crude test called "the Scotch tape test", … more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: May 2004
Creator: Wang, Chen
Partner: UNT Libraries

Synthesis of cubic boron nitride thin films on silicon substrate using electron beam evaporation.

Description: Cubic boron nitride (cBN) synthesis has gained lot of interest during the past decade as it offers outstanding physical and chemical properties like high hardness, high wear resistance, and chemical inertness. Despite of their excellent properties, every application of cBN is hindered by high compressive stresses and poor adhesion. The cost of equipment is also high in almost all the techniques used so far. This thesis deals with the synthesis of cubic phase of boron nitride on Si (100) wafers … more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: May 2004
Creator: Vemuri, Prasanna
Partner: UNT Libraries

Evaluation of hydrogen trapping in HfO2 high-κ dielectric thin films.

Description: Hafnium based high-κ dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in complementary metal oxide semiconductor (CMOS) devices. Hydrogen is one of the most significant elements in semiconductor technology because of its pervasiveness in various deposition and optimization processes of electronic structures. Therefore, it is important to understand the properties and behavior of hydrogen in semiconductors with the final aim of controlling and using … more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: August 2006
Creator: Ukirde, Vaishali
Partner: UNT Libraries

The Revival of Electrochemistry: Electrochemical Deposition of Metals in Semiconductor Related Research

Description: Adherent Cu films were electrodeposited onto polycrystalline W foils from purged solutions of 0.05 M CuSO4 in H2SO4 supporting electrolyte and 0.025 M CuCO3∙Cu(OH)2 in 0.32 M H3BO3 and corresponding HBF4 supporting electrolyte, both at pH = 1. Films were deposited under constant potential conditions at voltages between -0.6 V and -0.2 V versus Ag/AgCl. All films produced by pulses of 10 s duration were visible to the eye, copper colored, and survived a crude test called "the Scotch tape test… more
Access: Restricted to the UNT Community Members at a UNT Libraries Location.
Date: August 2005
Creator: Wang, Chen
Partner: UNT Libraries
open access

FTIR-ATR Characterization of Hydrogel, Polymer Films, Protein Immobilization and Benzotriazole Adsorption on Copper Surface

Description: Plasma polymerization techniques were used to synthesize and deposit hydrogel on silicon (Si) substrate. Hydrogel is a network of polymer chains that are water-insoluble and has a high degree of flexibility. The various fields of applications of hydrogel include drug release, biosensors and tissue engineering etc. Hydrogel synthesized from different monomers possess a common property of moisture absorption. In this work two monomers were used namely 1-amino-2-propanol (1A2P) and 2(ethylamin… more
Date: December 2007
Creator: Pillai, Karthikeyan
Partner: UNT Libraries
Back to Top of Screen