Characterization of Boron Nitride Thin Films on Silicon (100) Wafer.

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Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM techniques. In addition, a pin-on-disk tribological test was used to measure coefficient of friction. Results indicated that samples deposited at 400°C contained higher cubic phase of BN compared to those ... continued below

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Maranon, Walter August 2007.

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  • Maranon, Walter

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Cubic boron nitride (cBN) thin films offer attractive mechanical and electrical properties. The synthesis of cBN films have been deposited using both physical and chemical vapor deposition methods, which generate internal residual, stresses that result in delamination of the film from substrates. Boron nitride films were deposited using electron beam evaporation without bias voltage and nitrogen bombardment (to reduce stresses) were characterize using FTIR, XRD, SEM, EDS, TEM, and AFM techniques. In addition, a pin-on-disk tribological test was used to measure coefficient of friction. Results indicated that samples deposited at 400°C contained higher cubic phase of BN compared to those films deposited at room temperature. A BN film containing cubic phase deposited at 400°C for 2 hours showed 0.1 friction coefficient.

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  • August 2007

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  • Jan. 14, 2008, 11:14 p.m.

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  • June 30, 2015, 4:08 p.m.

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Maranon, Walter. Characterization of Boron Nitride Thin Films on Silicon (100) Wafer., thesis, August 2007; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc3942/: accessed February 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .