Synthesis of cubic boron nitride thin films on silicon substrate using electron beam evaporation.

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Cubic boron nitride (cBN) synthesis has gained lot of interest during the past decade as it offers outstanding physical and chemical properties like high hardness, high wear resistance, and chemical inertness. Despite of their excellent properties, every application of cBN is hindered by high compressive stresses and poor adhesion. The cost of equipment is also high in almost all the techniques used so far. This thesis deals with the synthesis of cubic phase of boron nitride on Si (100) wafers using electron beam evaporator, a low cost equipment that is capable of depositing films with reduced stresses. Using this process, ... continued below

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Vemuri, Prasanna May 2004.

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  • Vemuri, Prasanna

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Description

Cubic boron nitride (cBN) synthesis has gained lot of interest during the past decade as it offers outstanding physical and chemical properties like high hardness, high wear resistance, and chemical inertness. Despite of their excellent properties, every application of cBN is hindered by high compressive stresses and poor adhesion. The cost of equipment is also high in almost all the techniques used so far. This thesis deals with the synthesis of cubic phase of boron nitride on Si (100) wafers using electron beam evaporator, a low cost equipment that is capable of depositing films with reduced stresses. Using this process, need of ion beam employed in ion beam assisted processes can be eliminated thus reducing the surface damage and enhancing the film adhesion. Four sets of samples have been deposited by varying substrate temperature and the deposition time. scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FTIR) techniques have been used to determine the structure and composition of the films deposited. X-ray diffraction (XRD) was performed on one of the samples to determine the thickness of the film deposited for the given deposition rate. Several samples showed dendrites being formed as a stage of film formation. It was found that deposition at substrate temperature of 400oC and for a period of one hour yielded high quality cubic boron nitride films.

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  • May 2004

Added to The UNT Digital Library

  • May 14, 2008, 8:41 p.m.

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  • Dec. 15, 2008, 5:12 p.m.

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Vemuri, Prasanna. Synthesis of cubic boron nitride thin films on silicon substrate using electron beam evaporation., thesis, May 2004; Denton, Texas. (digital.library.unt.edu/ark:/67531/metadc5542/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; .