Impact ionization in GaAs: A screened exchange density-functional approach
Description:
Results are presented of a fully ab initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave method. The calculated impact ionization rates show a marked orientation dependence in k space, indicating the strong restrictions imposed by the conservation of energy and momentum. This anisotropy diminishes as the impacting electron energy…
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Date:
August 13, 2001
Creator:
Picozzi, S., Asahi, R., Geller, C.B., Continenza, A., and Freeman, A.J.
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Partner:
UNT Libraries Government Documents Department