Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, September 15-December 31, 1979
Description:
Polycrystalline silicon films 14-22 ..mu..m thick and with average grain diameters of 20-40 ..mu..m were deposited by vacuum deposition onto both ceramic and sapphire substrates which were previously coated with a thin (1-2 ..mu..m) TiB/sub 2/ conducting layer. The large grains are the result of an interaction in the initial growth stages between silicon and TiB/sub 2/. SIMS studies of B/Ti/Al/sub 2/O/sub 3/, B/Al/sub 2/O/sub 3/, and Ti/Al/sub 2/O/sub 3/, interactions are reported as part of a …
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Date:
March 1, 1980
Creator:
Feldman, C.; Arrington, C. H.; Blum, N. A. & Satkiewicz, F. G.
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