Graphene Magnetic Tunnel Junction Spin Filters and Methods of Making
Description:
Patent relating to methods of forming a few molecule thick graphene layer on a ferromagnetic layer, at temperatures and conditions consistent with integration with silicon-based complementary metal oxide semiconductors (Si CMOS).
Date:
February 7, 2017
Creator:
Kelber, Jeffry A. & Zhou, Mi
Item Type:
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Partner:
UNT College of Arts and Sciences