Nitrogen effects on crystallization kinetics of amorphous TiOxNy thin films Page: 5 of 29
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III. Data
The first observation on the TiO2 samples made with increased nitrogen is that
the deposition rate also increased. This trend can be seen in Figure 1, where
the thickness d relates to the dynamic deposition rate (DDR):
d DD Power # passes x # cathodes
/en gt/) /lnespeed
The increase in DDR is not surprising because as nitrogen was added oxygen
was removed, and the operating point relocated to a more metallic region of the
hysteresis curve. When oxygen was taken out of a pure oxide plasma it
transitioned to metallic mode at a higher flow rate than with a mixed
oxygen/nitrogen plasma. This shows that the nitrogen acts as a stabilizer so
operation is allowed with the target surface at a more metallic state.
Chemically, Ti prefers to react with oxygen, which may make the nitrogen
effectively inert.
Optical analysis revealed that the changes made in the nitrogen content did not
greatly increase the absorption of the film. The index of refraction and extinction
coefficient values can be seen in Table 1. The observed index of refraction
decreases minimally. The slight change in the extinction coefficient indicates
that the plasma stays in the oxide mode and that little to no TiN, which has highHukari, Dannenberg, Stach
5
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Hukari, Kyle; Dannenberg, Rand & Stach, E.A. Nitrogen effects on crystallization kinetics of amorphous TiOxNy thin films, article, March 30, 2001; Berkeley, California. (https://digital.library.unt.edu/ark:/67531/metadc782309/m1/5/: accessed May 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.