Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges

Thumbnail image of item number 1 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.
Thumbnail image of item number 2 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.
Thumbnail image of item number 3 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.
Thumbnail image of item number 4 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.
Showing 1-4 of 19 pages in this report.

PDF Version Also Available for Download.

Description

The lack of protection for semiconductor bridges (SCBs) against human electrostatic discharge (ESD) presents an obstacle to widespread use of this device. The goal of this research is to protect SCB initiators against pin-to-pin ESD without affecting their performance. Two techniques were investigated. In the first, a parallel capacitor is used to attenuate high frequencies. The second uses a parallel zener diode to limit the voltage amplitude. Both the 1 {micro}F capacitor and the 14 V zener diode protected the SCBs from ESD. The capacitor provided the best protection. The protection circuits had no effect on the SCB's threshold voltage. … continued below

Physical Description

19 pages

Creation Information

KING, TONY L. & TARBELL, WILLIAM W. July 1, 2002.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by the UNT Libraries Government Documents Department to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 38 times. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Authors

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

About | Browse this Partner

Contact Us

Corrections Questions

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

The lack of protection for semiconductor bridges (SCBs) against human electrostatic discharge (ESD) presents an obstacle to widespread use of this device. The goal of this research is to protect SCB initiators against pin-to-pin ESD without affecting their performance. Two techniques were investigated. In the first, a parallel capacitor is used to attenuate high frequencies. The second uses a parallel zener diode to limit the voltage amplitude. Both the 1 {micro}F capacitor and the 14 V zener diode protected the SCBs from ESD. The capacitor provided the best protection. The protection circuits had no effect on the SCB's threshold voltage. The function time for the CP-loaded SCBs with capacitors was about 11 {micro}s when fired by a firing set charged to 40 V. The SCBs failed to function when protected by the 6 V and 8 V zeners. The 51 V zener did not provide adequate protection against ESD. The parallel capacitor succeeded in protecting SCB initiators against pin-to-pin ESD without affecting their performance. Additional experiments should be done on SCBs and actual detonators to further quantify the effectiveness of this technique. Methods for retrofitting existing SCB initiators and integrating capacitors into future devices should also be explored.

Physical Description

19 pages

Source

  • Other Information: PBD: 1 Jul 2002

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

About | Browse this Collection

What responsibilities do I have when using this report?

Digital Files

When

Dates and time periods associated with this report.

Creation Date

  • July 1, 2002

Added to The UNT Digital Library

  • Oct. 19, 2015, 7:39 p.m.

Description Last Updated

  • April 11, 2016, 8:10 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 38
More Statistics

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

Thumbnail image of item number 1 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.
Thumbnail image of item number 2 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.
Thumbnail image of item number 3 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.
Thumbnail image of item number 4 in: 'Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges'.

PDF Version Also Available for Download.

Citations, Rights, Re-Use

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Links for Robots

Helpful links in machine-readable formats.

Archival Resource Key (ARK)

International Image Interoperability Framework (IIIF)

Metadata Formats

Images

URLs

Stats

KING, TONY L. & TARBELL, WILLIAM W. Pin-to-Pin Electrostatic Discharge Protection for Semiconductor Bridges, report, July 1, 2002; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc743293/: accessed June 14, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

Back to Top of Screen