Advancements in the characterization of 'hyper-thin' oxynitride gate dielectrics through exit wave reconstruction HRTEM and XPS

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The physical thickness of silicon oxynitride gate dielectric materials currently in development have dimensions in the range of 15-20 Angstrom ({approx}6-8 oxygen atoms), while approaching the dielectric constant equivalent oxide thickness (EOT) of 12 Angstrom silicon dioxide. These structures present serious challenges in meeting stringent requirements within the semiconductor industry for precise determination of thickness, interfacial roughness and chemical distribution. Limitations in conventional HRTEM must be removed that would minimize errors in such measurements. Our approach was to use the National Center for Electron Microscopy (NCEM) One Angstrom Microscope (O Angstrom M), together with focal series acquisition (FSA) and exit … continued below

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Principe, E.L.; Watson, D.G. & Kisielowski, C. September 1, 2002.

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The physical thickness of silicon oxynitride gate dielectric materials currently in development have dimensions in the range of 15-20 Angstrom ({approx}6-8 oxygen atoms), while approaching the dielectric constant equivalent oxide thickness (EOT) of 12 Angstrom silicon dioxide. These structures present serious challenges in meeting stringent requirements within the semiconductor industry for precise determination of thickness, interfacial roughness and chemical distribution. Limitations in conventional HRTEM must be removed that would minimize errors in such measurements. Our approach was to use the National Center for Electron Microscopy (NCEM) One Angstrom Microscope (O Angstrom M), together with focal series acquisition (FSA) and exit wave reconstruction (EWR) techniques to obtain <0.8A interpretable resolution. HRTEM data on the same oxynitride materials from an aberration corrected (Cs=0) microscope were also collected as part of this work, as were scanning TEM (STEM) measurements. The H RTEM characterization provides an absolute calibration and validation for a precise ''near-line'' metrology to determine gate oxide thickness and nitrogen dose using x-ray photoelectron spectroscopy (XPS).

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Ernest Orlando Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (US); OSTI as DE00808948

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  • Report No.: LBNL--52151
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 808948
  • Archival Resource Key: ark:/67531/metadc736704

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Principe, E.L.; Watson, D.G. & Kisielowski, C. Advancements in the characterization of 'hyper-thin' oxynitride gate dielectrics through exit wave reconstruction HRTEM and XPS, book, September 1, 2002; Berkeley, California. (https://digital.library.unt.edu/ark:/67531/metadc736704/: accessed July 16, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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