Advancements in the characterization of 'hyper-thin' oxynitride gate dielectrics through exit wave reconstruction HRTEM and XPS

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The physical thickness of silicon oxynitride gate dielectric materials currently in development have dimensions in the range of 15-20 Angstrom ({approx}6-8 oxygen atoms), while approaching the dielectric constant equivalent oxide thickness (EOT) of 12 Angstrom silicon dioxide. These structures present serious challenges in meeting stringent requirements within the semiconductor industry for precise determination of thickness, interfacial roughness and chemical distribution. Limitations in conventional HRTEM must be removed that would minimize errors in such measurements. Our approach was to use the National Center for Electron Microscopy (NCEM) One Angstrom Microscope (O Angstrom M), together with focal series acquisition (FSA) and exit ... continued below

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Principe, E.L.; Watson, D.G. & Kisielowski, C. September 1, 2002.

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The physical thickness of silicon oxynitride gate dielectric materials currently in development have dimensions in the range of 15-20 Angstrom ({approx}6-8 oxygen atoms), while approaching the dielectric constant equivalent oxide thickness (EOT) of 12 Angstrom silicon dioxide. These structures present serious challenges in meeting stringent requirements within the semiconductor industry for precise determination of thickness, interfacial roughness and chemical distribution. Limitations in conventional HRTEM must be removed that would minimize errors in such measurements. Our approach was to use the National Center for Electron Microscopy (NCEM) One Angstrom Microscope (O Angstrom M), together with focal series acquisition (FSA) and exit wave reconstruction (EWR) techniques to obtain <0.8A interpretable resolution. HRTEM data on the same oxynitride materials from an aberration corrected (Cs=0) microscope were also collected as part of this work, as were scanning TEM (STEM) measurements. The H RTEM characterization provides an absolute calibration and validation for a precise ''near-line'' metrology to determine gate oxide thickness and nitrogen dose using x-ray photoelectron spectroscopy (XPS).

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Ernest Orlando Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (US); OSTI as DE00808948

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  • Other Information: PBD: 1 Sep 2002

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  • Report No.: LBNL--52151
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 808948
  • Archival Resource Key: ark:/67531/metadc736704

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 1, 2002

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  • Oct. 18, 2015, 6:40 p.m.

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  • April 4, 2016, 2:48 p.m.

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Principe, E.L.; Watson, D.G. & Kisielowski, C. Advancements in the characterization of 'hyper-thin' oxynitride gate dielectrics through exit wave reconstruction HRTEM and XPS, book, September 1, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc736704/: accessed September 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.