Narrow band gap semiconductors such as ReSi{sub 2{minus}x} (Eg {approximately} 0.12 eV) are potential materials for infrared detectors. Further, ReSi{sub 2{minus}x} is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi{sub 2{minus}x} heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi{sub 2{minus}x} film and (001)Si substrate was observed by ion channeling. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi{sub 2{minus}x} epitaxial films on (001) Si. Comparisons are …
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Narrow band gap semiconductors such as ReSi{sub 2{minus}x} (Eg {approximately} 0.12 eV) are potential materials for infrared detectors. Further, ReSi{sub 2{minus}x} is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi{sub 2{minus}x} heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi{sub 2{minus}x} film and (001)Si substrate was observed by ion channeling. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi{sub 2{minus}x} epitaxial films on (001) Si. Comparisons are made to our previous microscopy study on the defect structures in bulk single crystals of ReSi{sub 2{minus}x}.
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Mahan, J.E.; Mirsa, A. & Mitchell, T.E.Defect Structures in Semiconducting ReSi{sub 2-x} Epitaxial Thin Films,
article,
February 1, 1999;
New Mexico.
(https://digital.library.unt.edu/ark:/67531/metadc734209/:
accessed July 15, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.
