Defect Structures in Semiconducting ReSi{sub 2-x} Epitaxial Thin Films

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Narrow band gap semiconductors such as ReSi{sub 2{minus}x} (Eg {approximately} 0.12 eV) are potential materials for infrared detectors. Further, ReSi{sub 2{minus}x} is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi{sub 2{minus}x} heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi{sub 2{minus}x} film and (001)Si substrate was observed by ion channeling. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi{sub 2{minus}x} epitaxial films on (001) Si. Comparisons are ... continued below

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3 p.

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Mahan, J.E.; Mirsa, A. & Mitchell, T.E. February 1, 1999.

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Narrow band gap semiconductors such as ReSi{sub 2{minus}x} (Eg {approximately} 0.12 eV) are potential materials for infrared detectors. Further, ReSi{sub 2{minus}x} is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi{sub 2{minus}x} heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi{sub 2{minus}x} film and (001)Si substrate was observed by ion channeling. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi{sub 2{minus}x} epitaxial films on (001) Si. Comparisons are made to our previous microscopy study on the defect structures in bulk single crystals of ReSi{sub 2{minus}x}.

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3 p.

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OSTI as DE00007959

Medium: P; Size: 3 pages

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  • Microscopy and Microanalysis '99, Portland, OR (US), 08/01/1999--08/05/1999

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  • Report No.: LA-UR-98-810
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 7959
  • Archival Resource Key: ark:/67531/metadc734209

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  • February 1, 1999

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 10, 2017, 7:21 p.m.

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Mahan, J.E.; Mirsa, A. & Mitchell, T.E. Defect Structures in Semiconducting ReSi{sub 2-x} Epitaxial Thin Films, article, February 1, 1999; New Mexico. (digital.library.unt.edu/ark:/67531/metadc734209/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.