A study of p-type ohmic contacts to InAlAs/InGaAs heterostructures

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Optical modulators operating at near-infrared wavelengths are of interest for a variety of applications including bidirectional communications and optical interconnects. The fabrication of 1.06 {micro}m and 1.32 {micro}m operating wavelength strained-layer-superlattice vertical-cavity optoelectronic modulators requires the formation of a p-type ohmic contact to the InAlAs/InGaAs quarter-wave bottom mirror stack. In this study, BeAu and TiPtAu p-type ohmic contact metallization schemes were evaluated for use on molecular beam epitaxy (MBE) grown In{sub .10}Al{sub .90}As/In{sub .12}Ga{sub .88}As and In{sub .32}Al{sub .68}As/In{sub .33}Ga{sub .67}As device heterostructures. Recessed and nonrecessed transmission line measurement (TLM) structures were fabricated and evaluated as a function of rapid ... continued below

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16 p.

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Briggs, R.D.; Howard, A.J.; Baca, A.G.; Hafich, M.J. & Vawter, G.A. December 31, 1995.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Optical modulators operating at near-infrared wavelengths are of interest for a variety of applications including bidirectional communications and optical interconnects. The fabrication of 1.06 {micro}m and 1.32 {micro}m operating wavelength strained-layer-superlattice vertical-cavity optoelectronic modulators requires the formation of a p-type ohmic contact to the InAlAs/InGaAs quarter-wave bottom mirror stack. In this study, BeAu and TiPtAu p-type ohmic contact metallization schemes were evaluated for use on molecular beam epitaxy (MBE) grown In{sub .10}Al{sub .90}As/In{sub .12}Ga{sub .88}As and In{sub .32}Al{sub .68}As/In{sub .33}Ga{sub .67}As device heterostructures. Recessed and nonrecessed transmission line measurement (TLM) structures were fabricated and evaluated as a function of rapid thermal anneal (RTA) temperatures over the range of 360 C--420 C. Atomic force microscopy (AFM) was used to determine the surface morphology of each sample for evidence of metal or material degradation. For contacts directly on InGaAs layers, TiPtAu contacts had relatively high specific contact resistance values of {rho}{sub c} {approximately} 3 {times} 10{sup {minus}4} {Omega}cm{sup 2} and displayed no dependence on the anneal. The BeAu contacts had minimum specific contact resistance values of {rho}{sub c} {approximately} 5 {times} 10{sup {minus}7} {Omega}cm{sup 2} but showed evidence of degradation at higher temperatures. Contacts directly made to InAlAs layers had minimum specific contact resistances of {rho}{sub c} {approximately} 4 {times} 10{sup {minus}5} {Omega}cm{sup 2} and were improved slightly with the addition of a thin GaAs layer.

Physical Description

16 p.

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OSTI as DE96008869

Source

  • ICMCTF `96: international conference on metallurgical coatings and thin films, San Diego, CA (United States), 22-26 Apr 1996

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  • Other: DE96008869
  • Report No.: SAND--95-2217C
  • Report No.: CONF-960457--4
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/212554 | External Link
  • Office of Scientific & Technical Information Report Number: 212554
  • Archival Resource Key: ark:/67531/metadc673148

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  • December 31, 1995

Added to The UNT Digital Library

  • June 29, 2015, 9:42 p.m.

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  • April 14, 2016, 7:04 p.m.

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Briggs, R.D.; Howard, A.J.; Baca, A.G.; Hafich, M.J. & Vawter, G.A. A study of p-type ohmic contacts to InAlAs/InGaAs heterostructures, report, December 31, 1995; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc673148/: accessed January 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.