Properties of H, O and C in GaN

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The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into ... continued below

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7 p.

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Pearton, S.J.; Abernathy, C.R. & Lee, J.W. April 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

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7 p.

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OSTI as DE96008876

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  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE96008876
  • Report No.: SAND--96-0846C
  • Report No.: CONF-960401--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 212559
  • Archival Resource Key: ark:/67531/metadc664286

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  • April 1, 1996

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  • June 29, 2015, 9:42 p.m.

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  • June 24, 2016, 1:34 p.m.

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Pearton, S.J.; Abernathy, C.R. & Lee, J.W. Properties of H, O and C in GaN, article, April 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc664286/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.