Advantage of STEM is that no model structures are required to interpret the images to first order, so that unexpected interfacial phenomena will be immediately apparent, such as in CoSi{sub 2}/Si(100) interface made by Co implantation/annealing. By depositing two monolayer Ge marker layers during growth of Si{sub 0. 5}Ge{sub 0.5} alloy layer, a misfit dislocation was found to nucleate to relieve the strain. Hole concentration profiles can be measured in YBCO superconductor, using the pre-edge of the oxygen K EELS spectrum. Future directions of this combination of atomic-resolution imaging and analysis on a single microscope are discussed briefly.
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Oak Ridge National Lab., TN (United States)
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Tennessee
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Advantage of STEM is that no model structures are required to interpret the images to first order, so that unexpected interfacial phenomena will be immediately apparent, such as in CoSi{sub 2}/Si(100) interface made by Co implantation/annealing. By depositing two monolayer Ge marker layers during growth of Si{sub 0. 5}Ge{sub 0.5} alloy layer, a misfit dislocation was found to nucleate to relieve the strain. Hole concentration profiles can be measured in YBCO superconductor, using the pre-edge of the oxygen K EELS spectrum. Future directions of this combination of atomic-resolution imaging and analysis on a single microscope are discussed briefly.
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Pennycook, S. J.; Browning, N. D.; Jesson, D. E. & Chisholm, M. F.Probing interface structure and bonding at atomic resolution by STEM,
article,
June 1, 1993;
Tennessee.
(https://digital.library.unt.edu/ark:/67531/metadc1400225/:
accessed June 4, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.
