We have improved the quality of our narrow-bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV, having a photoresponse equal to or better than our plasma-enhanced CVD-grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale, as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate …
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We have improved the quality of our narrow-bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV, having a photoresponse equal to or better than our plasma-enhanced CVD-grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale, as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity, while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.
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Nelson, B. P.; Xu, Y.; Williamson, D. L.; Han, D.; Braunstein, R.; Boshta, M. et al.Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition: Preprint,
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August 1, 2002;
Golden, Colorado.
(https://digital.library.unt.edu/ark:/67531/metadc1395596/:
accessed May 25, 2024),
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