Plasma-assisted CVD of fluorinated, hydrogenated amorphous silicon. Final technical report, September 15, 1979-September 15, 1980
Description:
During the past year, approximately 300 large-area (400 cm/sup 2/) PIN hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated and tested. a-Si:H PIN cells which were plasma deposited at 200/sup 0/ to 350/sup 0/ were found to have high internal currents (13mA/cm/sup 2/), whereas those which were deposited by CVD at 500/sup 0/ to 650/sup 0/C had low internal currents. When corrected for optical losses in the top electrode, the internal quantum efficiency vs wavelength for the PIN cel…
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Date:
January 1, 1980
Creator:
Coleman, J. H.; Hammes, J. P. & Wiesmann, H. J.
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Partner:
UNT Libraries Government Documents Department