Defect Structures in Semiconducting ReSi{sub 2-x} Epitaxial Thin Films
Description:
Narrow band gap semiconductors such as ReSi{sub 2{minus}x} (Eg {approximately} 0.12 eV) are potential materials for infrared detectors. Further, ReSi{sub 2{minus}x} is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi{sub 2{minus}x} heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi{sub 2{minus…
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Date:
February 1, 1999
Creator:
Mahan, J.E.; Mirsa, A. & Mitchell, T.E.
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