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Oxygen Incorporation During Fabrication of Substrate CdTe Photovoltaic Devices: Preprint

Description: Recently, CdTe photovoltaic (PV) devices fabricated in the nonstandard substrate configuration have attracted increasing interest because of their potential compatibility with flexible substrates such as metal foils and polymer films. This compatibility could lead to the suitability of CdTe for roll-to-roll processing and building-integrated PV. Currently, however, the efficiencies of substrate CdTe devices reported in the literature are significantly lower ({approx}6%-8%) than those of high-pe… more
Date: June 1, 2012
Creator: Duenow, J. N.; Dhere, R. G.; Kuciauskas, D.; Li, J. V.; Pankow, J. W.; DeHart, C. M. et al.
Partner: UNT Libraries Government Documents Department
open access

Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint

Description: We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, re… more
Date: July 1, 2012
Creator: Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R. et al.
Partner: UNT Libraries Government Documents Department
open access

Influence of Damp Heat on the Electrical, Optical, and Morphological Properties of Encapsulated CuInGaSe2 Devices: Preprint

Description: CuInGaSe2 (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration a… more
Date: August 1, 2011
Creator: Sundaramoorthy, R.; Pern, F. J.; Teeter, G.; Li, J. V.; Young, M.; Kuciauskas, D. et al.
Partner: UNT Libraries Government Documents Department
open access

Study on the Humidity Susceptibility of Thin-Film CIGS Absorber

Description: The report summarizes the research on the susceptibility of a thermally co-evaporated CuInGaSe2 (CIGS) thin-film absorber to humidity and its consequence on composition, morphology, electrical and electronic properties, and device efficiency.
Date: January 1, 2010
Creator: Pern, F. J.; Egaas, B.; To, B.; Jiang, C. S.; Li, J. V.; Glynn, S. et al.
Partner: UNT Libraries Government Documents Department
open access

Response of Cds/CdTe Devices to Te Exposure of Back Contact: Preprint

Description: Theoretical predictions of thin-film CdS/CdTe photovoltaic (PV) devices have suggested performance may be improved by reducing recombination due to Te-vacancy (VTe) or Te-interstitial (Tei) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it also may be coupled to formation of beneficial cadmium vacancy (VCd) defects. If this is true, reducing potential effects of VTe or Tei may be difficult without also reducing the density of VCd. In c… more
Date: June 1, 2012
Creator: Gessert, T. A.; Burst, J. M.; Ma, J.; Wei, S. H.; Kuciauskas, D.; Barnes, T. M. et al.
Partner: UNT Libraries Government Documents Department
open access

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Description: We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.
Date: July 1, 2011
Creator: Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P. & Branz, H. M.
Partner: UNT Libraries Government Documents Department
open access

Development of Substrate Structure CdTe Photovoltaic Devices with Performance Exceeding 10%: Preprint

Description: Most work on CdTe-based solar cells has focused on devices with a superstrate structure. This focus is due to the early success of the superstrate structure in producing high-efficiency cells, problems of suitable ohmic contacts for lightly doped CdTe, and the simplicity of the structure for manufacturing. The development of the CdCl2 heat treatment boosted CdTe technology and perpetuated the use of the superstrate structure. However, despite the beneficial attributes of the superstrate structu… more
Date: August 1, 2012
Creator: Dhere, R. G.; Duenow, J. N.; DeHart, C. M.; Li, J. V.; Kuciauskas, D. & Gessert, T. A.
Partner: UNT Libraries Government Documents Department
open access

Optical-Fiber-Based, Time-Resolved Photoluminescence Spectrometer for Thin-Film Absorber Characterization and Analysis of TRPL Data for CdS/CdTe Interface: Preprint

Description: We describe the design of a time resolved photoluminescence (TRPL) spectrometer for rapid semiconductor absorber characterization. Simplicity and flexibility is achieved by using single optical fiber to deliver laser pulses and to collect photoluminescence. We apply TRPL for characterization of CdS/CdTe absorbers after deposition, CdCl2 treatment, Cu doping, and back contact formation. Data suggest this method could be applied in various stages of PV device processing. Finally, we show how to a… more
Date: June 1, 2012
Creator: Kuciauskas, D.; Duenow, J. N.; Kanevce, A.; Li, J. V.; Young, M. R.; Dippo, P. et al.
Partner: UNT Libraries Government Documents Department
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