Influence of Damp Heat on the Electrical, Optical, and Morphological Properties of Encapsulated CuInGaSe2 Devices: Preprint

PDF Version Also Available for Download.

Description

CuInGaSe2 (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration and widening of depletion width. Surface analysis of the devices after 700-h DH exposure showed the formation of Zn(OH)2 from hydrolysis of the Al-doped ZnO (AZO) window layer by ... continued below

Physical Description

8 p.

Creation Information

Sundaramoorthy, R.; Pern, F. J.; Teeter, G.; Li, J. V.; Young, M.; Kuciauskas, D. et al. August 1, 2011.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

CuInGaSe2 (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration and widening of depletion width. Surface analysis of the devices after 700-h DH exposure showed the formation of Zn(OH)2 from hydrolysis of the Al-doped ZnO (AZO) window layer by the moisture, which was detrimental to the collection of minority carriers. Minority carrier lifetimes observed for the CIGS devices using time resolved photoluminescence (TRPL) remained relatively long after DH exposure. By etching the DH-exposed devices and re-fabricating with new component layers, the performance of reworked devices improved significantly, further indicating that DH-induced degradation of the AZO layer and/or the CdS buffer was the primary performance-degrading factor.

Physical Description

8 p.

Source

  • Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 19-24 June 2011, Seattle, Washington

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: NREL/CP-5200-50841
  • Grant Number: AC36-08GO28308
  • Office of Scientific & Technical Information Report Number: 1024519
  • Archival Resource Key: ark:/67531/metadc846550

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • August 1, 2011

Added to The UNT Digital Library

  • May 19, 2016, 3:16 p.m.

Description Last Updated

  • April 6, 2017, 2:04 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Sundaramoorthy, R.; Pern, F. J.; Teeter, G.; Li, J. V.; Young, M.; Kuciauskas, D. et al. Influence of Damp Heat on the Electrical, Optical, and Morphological Properties of Encapsulated CuInGaSe2 Devices: Preprint, article, August 1, 2011; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc846550/: accessed January 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.