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Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

Description: We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 8… more
Date: June 1, 2012
Creator: Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A. & Al-Jassim, M. M.
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Partner: UNT Libraries Government Documents Department
open access

Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

Description: We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement o… more
Date: April 1, 2012
Creator: Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G. et al.
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Partner: UNT Libraries Government Documents Department
open access

Determination of Grain Boundary Charging in Cu(In,Ga)Se2 Thin Films: Preprint

Description: Surface potential mapping of Cu(In,Ga)Se2 (CIGS) thin films using scanning Kelvin probe force microscopy (SKPFM) aims to understand the minority-carrier recombination at the grain boundaries (GBs) of this polycrystalline material by examining GB charging, which has resulted in a number of publications. However, the reported results are highly inconsistent. In this paper, we report on the potential mapping by measuring wide-bandgap or high-Ga-content films and by using a complementary atomic for… more
Date: June 1, 2012
Creator: Jiang, C. S.; Contreras, M. A.; Repins, I.; Moutinho, H. R.; Noufi, R. & Al-Jassim, M. M.
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Partner: UNT Libraries Government Documents Department
open access

Study on the Humidity Susceptibility of Thin-Film CIGS Absorber

Description: The report summarizes the research on the susceptibility of a thermally co-evaporated CuInGaSe2 (CIGS) thin-film absorber to humidity and its consequence on composition, morphology, electrical and electronic properties, and device efficiency.
Date: January 1, 2010
Creator: Pern, F. J.; Egaas, B.; To, B.; Jiang, C. S.; Li, J. V.; Glynn, S. et al.
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Partner: UNT Libraries Government Documents Department
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