Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

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We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in ... continued below

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8 p.

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Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G. et al. April 1, 2012.

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We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement on a nc-Si:H cell with a higher oxygen impurity concentration shows that the nonuniformity of the electric field is much more pronounced than in samples having a lower O impurity, indicating that O is an electron donor in nc-Si:H materials. This nonuniform distribution of electric field implies a mixture of diffusion and drift of carrier transport in the nc-Si:H solar cells. The composition and structure of these nc-Si:H cells were further investigated by using secondary-ion mass spectrometry and Raman spectroscopy, respectively. The effects of impurity and structural properties on the electrical potential distribution and solar cell performance are discussed.

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8 p.

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  • To be presented at the 2012 MRS Spring Meeting, 9-13 April 2012, San Francisco, California

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  • Report No.: NREL/CP-5200-54833
  • Grant Number: AC36-08GO28308
  • Office of Scientific & Technical Information Report Number: 1043761
  • Archival Resource Key: ark:/67531/metadc843020

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  • April 1, 2012

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  • May 19, 2016, 3:16 p.m.

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  • April 6, 2017, 2:08 p.m.

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Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G. et al. Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint, article, April 1, 2012; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc843020/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.