Ultraviolet femtosecond and nanosecond laser ablation of silicon: Ablation efficiency and laser-induced plasma expansion
Description:
Femtosecond laser ablation of silicon in air was studied and compared with nanosecond laser ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the pulsed laser-induced plasma were determined from spectroscopic measurements. The electron number density and t…
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Date:
March 23, 2004
Creator:
Zeng, Xianzhong; Mao, Xianglei; Greif, Ralph & Russo, Richard E.
Partner:
UNT Libraries Government Documents Department