Ultraviolet femtosecond and nanosecond laser ablation of silicon: Ablation efficiency and laser-induced plasma expansion

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Femtosecond laser ablation of silicon in air was studied and compared with nanosecond laser ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the pulsed laser-induced plasma were determined from spectroscopic measurements. The electron number density and temperature of fs-pulse plasmas decreased faster than ns-pulse plasmas due to different energy deposition mechanisms. Images of the laser-induced plasma were obtained with femtosecond time-resolved laser ... continued below

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9 pages; OS: WINDOWS XP

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Zeng, Xianzhong; Mao, Xianglei; Greif, Ralph & Russo, Richard E. March 23, 2004.

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Femtosecond laser ablation of silicon in air was studied and compared with nanosecond laser ablation at ultraviolet wavelength (266 nm). Laser ablation efficiency was studied by measuring crater depth as a function of pulse number. For the same number of laser pulses, the fs-ablated crater was about two times deeper than the ns-crater. The temperature and electron number density of the pulsed laser-induced plasma were determined from spectroscopic measurements. The electron number density and temperature of fs-pulse plasmas decreased faster than ns-pulse plasmas due to different energy deposition mechanisms. Images of the laser-induced plasma were obtained with femtosecond time-resolved laser shadowgraph imaging. Plasma expansion in both the perpendicular and the lateral directions to the laser beam were compared for femtosecond and nanosecond laser ablation.

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9 pages; OS: WINDOWS XP

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OSTI as DE00836676

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  • Other Information: PBD: 23 Mar 2004

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  • Report No.: LBNL--56159
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/836676 | External Link
  • Office of Scientific & Technical Information Report Number: 836676
  • Archival Resource Key: ark:/67531/metadc783616

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • March 23, 2004

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

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  • April 4, 2016, 2:41 p.m.

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Zeng, Xianzhong; Mao, Xianglei; Greif, Ralph & Russo, Richard E. Ultraviolet femtosecond and nanosecond laser ablation of silicon: Ablation efficiency and laser-induced plasma expansion, report, March 23, 2004; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc783616/: accessed November 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.