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Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

Description: This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.
Date: May 1, 2008
Creator: Mountinho, H. R.; Dhere, R. G.; Romero, M. J.; Jiang, C. S.; To, B. & Al-Jassim, M. M.
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Partner: UNT Libraries Government Documents Department
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III-V Growth on Silicon Toward a Multijunction Cell

Description: A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on sili… more
Date: November 1, 2005
Creator: Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C. et al.
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Partner: UNT Libraries Government Documents Department
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Physical Properties of HWCVD Microcrystalline Silicon Thin Films: Preprint

Description: This conference paper describes Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the mor… more
Date: May 1, 2002
Creator: Moutinho, H. R.; Romero, M. J.; Jiang, C. S.; Xu, Y.; Nelson, B. P.; Jones, K. M. et al.
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Partner: UNT Libraries Government Documents Department
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AFM-Based Microelectrical Characterization of Grain Boundaries in Cu(In,Ga)Se2 Thin Films

Description: We report on a direct measurement of two-dimensional potential distribution on the surface of Cu(In,Ga)Se2 thin films using a nanoscale electrical characterization of scanning Kelvin probe microscopy both in air and in ultra-high vacuum. The potential measurement reveals a higher surface potential or a smaller work function on grain boundaries (GBs) of the film than on the grain surfaces. This demonstrates the existence of a local built-in potential on GBs, and the GB is positively charged. The… more
Date: February 1, 2005
Creator: Jiang, C. S.; Noufi, R.; Ramanathan, K.; AbuShama, J. A.; Moutinho, H. R. & Al-Jassim, M. M.
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Partner: UNT Libraries Government Documents Department
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Effect of Front-Side Silver Metallization on Underlying n+-p Junction in Multicrystalline Silicon Solar Cells: Preprint

Description: We report on the effect of front-side Ag metallization on the underlying n+-p junction of multicrystalline Si solar cells. The junction quality beneath the contacts was investigated by characterizing the uniformities of the electrostatic potential and doping concentration across the junction, using scanning Kelvin probe force microscopy and scanning capacitance microscopy. We investigated cells with a commercial Ag paste (DuPont PV159) and fired at furnace setting temperatures of 800 degrees, 8… more
Date: June 1, 2012
Creator: Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A. & Al-Jassim, M. M.
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Partner: UNT Libraries Government Documents Department
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Microscopic Measurements of Electrical Potential in Hydrogenated Nanocrystalline Silicon Solar Cells: Preprint

Description: We report on a direct measurement of electrical potential and field profiles across the n-i-p junction of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells, using the nanometer-resolution potential imaging technique of scanning Kelvin probe force microscopy (SKPFM). It was observed that the electric field is nonuniform across the i layer. It is much higher in the p/i region than in the middle and the n/i region, illustrating that the i layer is actually slightly n-type. A measurement o… more
Date: April 1, 2012
Creator: Jiang, C. S.; Moutinho, H. R.; Reedy, R. C.; Al-Jassim, M. M.; Yan, B.; Yue, G. et al.
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Partner: UNT Libraries Government Documents Department
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Determination of Grain Boundary Charging in Cu(In,Ga)Se2 Thin Films: Preprint

Description: Surface potential mapping of Cu(In,Ga)Se2 (CIGS) thin films using scanning Kelvin probe force microscopy (SKPFM) aims to understand the minority-carrier recombination at the grain boundaries (GBs) of this polycrystalline material by examining GB charging, which has resulted in a number of publications. However, the reported results are highly inconsistent. In this paper, we report on the potential mapping by measuring wide-bandgap or high-Ga-content films and by using a complementary atomic for… more
Date: June 1, 2012
Creator: Jiang, C. S.; Contreras, M. A.; Repins, I.; Moutinho, H. R.; Noufi, R. & Al-Jassim, M. M.
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Partner: UNT Libraries Government Documents Department
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Study on the Humidity Susceptibility of Thin-Film CIGS Absorber

Description: The report summarizes the research on the susceptibility of a thermally co-evaporated CuInGaSe2 (CIGS) thin-film absorber to humidity and its consequence on composition, morphology, electrical and electronic properties, and device efficiency.
Date: January 1, 2010
Creator: Pern, F. J.; Egaas, B.; To, B.; Jiang, C. S.; Li, J. V.; Glynn, S. et al.
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Partner: UNT Libraries Government Documents Department
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Conductive Atomic Free Microscopy of CdTe/CdS Solar Cells

Description: Conductive atomic force microscopy (C-AFM) is a recently developed technique that applies an electric voltage between a very sharp tip and the sample, permitting the study of the electrical properties of the sample with very high spatial resolution. It also provides current-voltage measurements at well-defined spots. C-AFM is applied simultaneously with atomic force microscopy, providing topographic and current images of the same region. In this work, we analyze CdTe/CdS samples, before and aft… more
Date: January 1, 2005
Creator: Moutinho, H. R.; Dhere, R. G.; Jiang, C. S.; Al-Jassim, M. M. & Kazmerski, L. L.
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Partner: UNT Libraries Government Documents Department
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Mechanisms of Growth of Nanocrystalline Silicon Deposited by Hot-Wire Chemical Vapor Deposition

Description: We have studied the growth of silicon thin films by hot-wire chemical vapor deposition under different conditions of filament temperature (Tf) and hydrogen dilution ratio (R). We found that these two parameters have a similar effect on the properties of the deposited films and show how they interact to control the growth dynamics. For relatively low values of Tf and/or R, the films are amorphous. An increase in the value of these parameters results in the appearance of a new phase, characterize… more
Date: February 1, 2005
Creator: Moutinho, H. R.; Jiang, C. S.; Xu, Y.; To, B.; Jones, K. M.; Teplin, C. W. et al.
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Partner: UNT Libraries Government Documents Department
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Direct Measurement of Built-in Electrical Potential in Photovoltaic Devices by Scanning Kelvin Probe Microscopy

Description: We report on direct measurements of the built-in electrical potential in Cu(In,Ga)Se2, GaInP2 single-junction, and GaInP2/GaAs tandem-junction solar cells, by using scanning Kelvin probe microscopy. Potential profiles on cross sections of the devices were measured quantitatively and spatially resolved in open and short circuit, under and without illuminations, with selective photon energies matching the band gaps of the junctions. The measurements provide valuable information about the electric… more
Date: May 1, 2003
Creator: Jiang, C. S.; Mutinho, H. R.; Hasoon, F. S.; Al-Thani, H. A.; Friedman, D. J.; Geisz, J. F. et al.
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Partner: UNT Libraries Government Documents Department
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