Formation of aluminum films on silicon by ion beam deposition: A comparison with ionized cluster beam deposition
Description:
The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on si…
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Date:
January 1, 1990
Creator:
Zuhr, R.A.; Haynes, T.E.; Galloway, M.D. (Oak Ridge National Lab., TN (USA)); Tanaka, S.; Yamada, A. & Yamada, I. (Kyoto Univ. (Japan). Ion Beam Engineering Lab.)
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