We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.
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National Renewable Energy Laboratory (NREL), Golden, CO.
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Golden, Colorado
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We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.
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Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P. & Branz, H. M.Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint,
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July 1, 2011;
Golden, Colorado.
(https://digital.library.unt.edu/ark:/67531/metadc830991/:
accessed July 16, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
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