Junction Formation in CuInSe{sub 2} Based Thin Film Devices

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The nature of the interface between CuInSe{sub 2} (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have … continued below

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Ramanathan, K.; Wiesner, H.; Asher, S.; Bhattacharya, R. N.; Keane, J.; Contreras, M. et al. November 18, 1998.

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The nature of the interface between CuInSe{sub 2} (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. It is quite possible that the CdS/CuInSe{sub 2} device is a buried, shallow junction with a CdS window layer, rather than a heterojunction. We have used these ideas to develop methods for fabricating devices without CdS or Cd. A 14.2% efficiency ZnO/CIGS device was obtained through aqueous treatment in Zn solutions.

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  • Presented at the National Center for Photovoltaics Program Review Meeting, Denver, CO (US), 09/08/1998--09/11/1998

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  • Other: DE00009540
  • Report No.: NREL/CP-520-25712
  • Grant Number: AC36-83CH10093
  • Office of Scientific & Technical Information Report Number: 9540
  • Archival Resource Key: ark:/67531/metadc792874

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  • November 18, 1998

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  • Dec. 19, 2015, 7:14 p.m.

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  • March 31, 2016, 8:12 p.m.

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Ramanathan, K.; Wiesner, H.; Asher, S.; Bhattacharya, R. N.; Keane, J.; Contreras, M. et al. Junction Formation in CuInSe{sub 2} Based Thin Film Devices, article, November 18, 1998; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc792874/: accessed July 16, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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