An integrated electro-optic lens/scanner device was fabricated on a ferroelectric LiTaO{sub 3} wafer. This was done using lithographically defined domain-inverted regions extending through the crystal thickness. A lens power of 0.233 cm{sup {minus}1}kV{sup {minus}1} and a scanner deflection of 12.68 mrad{sup {minus}1}kV{sup {minus}1} was observed. The authors also demonstrate an electro-optic lens stack collimator which collimates an input beam focused to a 5{micro}m waist diameter at {minus}2.3kV.
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Los Alamos National Lab., NM (United States)
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New Mexico
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An integrated electro-optic lens/scanner device was fabricated on a ferroelectric LiTaO{sub 3} wafer. This was done using lithographically defined domain-inverted regions extending through the crystal thickness. A lens power of 0.233 cm{sup {minus}1}kV{sup {minus}1} and a scanner deflection of 12.68 mrad{sup {minus}1}kV{sup {minus}1} was observed. The authors also demonstrate an electro-optic lens stack collimator which collimates an input beam focused to a 5{micro}m waist diameter at {minus}2.3kV.
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Gopalan, V.; Gahagan, K. T.; Jia, Q. X.; Tobinson, J. M.; Mitchell, T. E.; Schlesinger, T. E. et al.Integration of electro-optic lenses and scanners on ferroelectric LiTaO{sub 3},
article,
March 13, 1999;
New Mexico.
(https://digital.library.unt.edu/ark:/67531/metadc703740/:
accessed July 15, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.
