Molecular dynamics simulations and thermochemistry of reactive ion etching of silicon by chlorine, chlorine dimer, bromine, and bromine dimer cations

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Simulations of Cl plasma etch of Si surfaces with MD techniques agree reasonably well with the available experimental information on yields and surface morphologies. This information has been supplied to a Monte Carlo etch profile resulting in substantial agreement with comparable inputs provided through controlled experiments. To the extent that more recent measurements of etch rates are more reliable than older ones, preliminary MD simulations using bond-order corrections to the atomic interactions between neighboring Si atoms on the surface improves agreement with experiment through an increase in etch rate and improved agreement with XPS measurements of surface stoichiometry. Thermochemical and … continued below

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7 p.

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Valone, S. M.; Hanson, D. E. & Kress, J. D. May 8, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by the UNT Libraries Government Documents Department to the UNT Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 283 times. More information about this article can be viewed below.

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Simulations of Cl plasma etch of Si surfaces with MD techniques agree reasonably well with the available experimental information on yields and surface morphologies. This information has been supplied to a Monte Carlo etch profile resulting in substantial agreement with comparable inputs provided through controlled experiments. To the extent that more recent measurements of etch rates are more reliable than older ones, preliminary MD simulations using bond-order corrections to the atomic interactions between neighboring Si atoms on the surface improves agreement with experiment through an increase in etch rate and improved agreement with XPS measurements of surface stoichiometry. Thermochemical and geometric analysis of small Si-Br molecules is consistent with the current notions of the effects of including brominated species in etchant gases.

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7 p.

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OSTI as DE99000765

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  • Conference on modeling and simulation of microsystems, semiconductors, sensors and actuators, Santa Clara, CA (United States), 6-8 Apr 1998

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  • Other: DE99000765
  • Report No.: LA-UR--98-2183
  • Report No.: CONF-980430--
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 296657
  • Archival Resource Key: ark:/67531/metadc689072

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  • May 8, 1998

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  • July 25, 2015, 2:20 a.m.

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  • Aug. 19, 2020, 5:19 p.m.

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Valone, S. M.; Hanson, D. E. & Kress, J. D. Molecular dynamics simulations and thermochemistry of reactive ion etching of silicon by chlorine, chlorine dimer, bromine, and bromine dimer cations, article, May 8, 1998; New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc689072/: accessed July 16, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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