Mechanisms of Growth of Nanocrystalline Silicon Deposited by Hot-Wire Chemical Vapor Deposition

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We have studied the growth of silicon thin films by hot-wire chemical vapor deposition under different conditions of filament temperature (Tf) and hydrogen dilution ratio (R). We found that these two parameters have a similar effect on the properties of the deposited films and show how they interact to control the growth dynamics. For relatively low values of Tf and/or R, the films are amorphous. An increase in the value of these parameters results in the appearance of a new phase, characterized by heavily faulted (220)-oriented columnar grains; for even higher values, a randomly oriented nanocrystalline phase appears. In general, … continued below

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Moutinho, H. R.; Jiang, C. S.; Xu, Y.; To, B.; Jones, K. M.; Teplin, C. W. et al. February 1, 2005.

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We have studied the growth of silicon thin films by hot-wire chemical vapor deposition under different conditions of filament temperature (Tf) and hydrogen dilution ratio (R). We found that these two parameters have a similar effect on the properties of the deposited films and show how they interact to control the growth dynamics. For relatively low values of Tf and/or R, the films are amorphous. An increase in the value of these parameters results in the appearance of a new phase, characterized by heavily faulted (220)-oriented columnar grains; for even higher values, a randomly oriented nanocrystalline phase appears. In general, there is more than one phase present in the film, and the microstructure varies as we go from the bottom to the top of the film. Although Tf and R have similar effects on the physical properties, they affect the deposition rate in a different way.

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  • Prepared for the 31st IEEE Photovoltaics Specialists Conference and Exhibition, Lake Buena Vista, FL (US), 01/03/2005--01/07/2005

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  • Report No.: NREL/CP-520-37345
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 15016400
  • Archival Resource Key: ark:/67531/metadc1405700

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  • February 1, 2005

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  • Jan. 23, 2019, 12:54 p.m.

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Moutinho, H. R.; Jiang, C. S.; Xu, Y.; To, B.; Jones, K. M.; Teplin, C. W. et al. Mechanisms of Growth of Nanocrystalline Silicon Deposited by Hot-Wire Chemical Vapor Deposition, article, February 1, 2005; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc1405700/: accessed July 16, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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