Electron cyclotron resonance deposition of amorphous silicon alloy films and devices. Final subcontract report, 1 April 1991--31 March 1992

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This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR … continued below

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58 p.

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Shing, Y. H. October 1, 1992.

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  • Shing, Y. H. Jet Propulsion Lab., Pasadena, CA (United States)

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This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR plasma. a-Si:(Xe,H) possessed low, stable dark conductivities and high photosensitivites. Light-soaking revealed photodegradation rates about 35% lower than those of comparable radio frequency (rf)-deposited material. ECR-deposited p-type a SiC:H and intrinsic a-Si:H films underwent evaluation as components of p-i-n solar cells with standard rf films for the remaining layers.

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58 p.

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OSTI; NTIS; GPO Dep.

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  • Other Information: PBD: Oct 1992

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  • October 1, 1992

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Thumbnail image of item number 1 in: 'Electron cyclotron resonance deposition of amorphous silicon alloy films and devices. Final subcontract report, 1 April 1991--31 March 1992'.
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Shing, Y. H. Electron cyclotron resonance deposition of amorphous silicon alloy films and devices. Final subcontract report, 1 April 1991--31 March 1992, report, October 1, 1992; Golden, Colorado. (https://digital.library.unt.edu/ark:/67531/metadc1395934/: accessed July 5, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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