High pressure optical studies of semiconductors and heterostructures. Final report

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The authors have studied the effects of hydrostatic pressure on the confined transitions in quantum well heterostructures, using lattice matched GaAs/Al{sub x}GaAs{sub 1{minus}x}As, strained layer narrow band gap GaSb/AlSb and In{sub x}Ga{sub 1{minus}x}As/GaAs, and strained layer wide gap Zn{sub 1{minus}x}Cd{sub x}Se/ZnSe as examples. Precise values of the energies, pressure coefficients and band alignments are determined. In strained epilayers the interfacial strains, deformation potential constants and compressibilities are deduced. Strain compensation, structural stability and phase transitions are probed. The authors have observed a novel type of Fano resonance of excitons in GaAs associated with the {Gamma} conduction band as they hybridize … continued below

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Chandrasekhar, H. R. February 1, 1995.

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The authors have studied the effects of hydrostatic pressure on the confined transitions in quantum well heterostructures, using lattice matched GaAs/Al{sub x}GaAs{sub 1{minus}x}As, strained layer narrow band gap GaSb/AlSb and In{sub x}Ga{sub 1{minus}x}As/GaAs, and strained layer wide gap Zn{sub 1{minus}x}Cd{sub x}Se/ZnSe as examples. Precise values of the energies, pressure coefficients and band alignments are determined. In strained epilayers the interfacial strains, deformation potential constants and compressibilities are deduced. Strain compensation, structural stability and phase transitions are probed. The authors have observed a novel type of Fano resonance of excitons in GaAs associated with the {Gamma} conduction band as they hybridize with the X and L continua via electron-phonon coupling. This effect is used to extract the intervalley electron-phonon deformation potential D{sub {Gamma}X} to be 10.7 {+-} 0.7 eV/{angstrom}. They have observed a new electron trap state in Al{sub 0.3}Ga{sub 0.7}As doped with silicon at pressure of 60 kbar. They postulate that this new trap state has a large lattice relaxation with the trap energy well above the X CB. These trap states may be present in all Al{sub x}Ga{sub x}As materials and may be dominant at large x values (0.7 < x < 1).

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Medium: P; Size: 14 p.

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OSTI; NTIS; GPO Dep.

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  • Other Information: PBD: [1995]

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  • February 1, 1995

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Chandrasekhar, H. R. High pressure optical studies of semiconductors and heterostructures. Final report, report, February 1, 1995; United States. (https://digital.library.unt.edu/ark:/67531/metadc1275201/: accessed July 16, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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