The applicability of Pd/sub x/Ta/sub 1-x/ as a diffusion barrier on Si has been investigated. For this purpose Pd/sub x/Ta/sub 1-x/ films of 200 nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between over-layer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as-deposited Pd/sub x/Ta/sub 1-x/ films with 0.2 less than or equal to x less than or equal to 0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing …
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The applicability of Pd/sub x/Ta/sub 1-x/ as a diffusion barrier on Si has been investigated. For this purpose Pd/sub x/Ta/sub 1-x/ films of 200 nm thickness (x ranges from 0 to 1) were deposited on Si(100), and the reaction between over-layer and substrate was studied as a function of temperature. Interaction was found to occur at temperatures increasing with the Ta content. The as-deposited Pd/sub x/Ta/sub 1-x/ films with 0.2 less than or equal to x less than or equal to 0.6 were found to be amorphous. The amorphous phase had a higher reaction temperature than the crystalline one, causing a discontinuous step in the reaction temperature. RBS spectra revealed that for the Pd-rich compositions first a stoichiometric Pd2Si layer formed underneath a pure Ta layer. At higher temperatures TaSi2 formed at the surface. For Ta-rich compositions Pd2Si formed first as well, however, the reaction temperature was so high that Pd2Si grains formed in a Si matrix. The defect density of the Ta layer, which remained after outdiffusion of Pd, was investigated using variable energy positron annihilation. The defect concentration is very high, as deduced from the trapped positron fraction. A model is presented that describes the composition dependence of the reaction temperature. 26 refs., 6 figs., 1 tab.
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Van Der Kolk, G. J.; Kuiper, A. E. T.; Duchateau, J. P. W. B.; Willemsen, M.; Nielsen, B. & Lynn, K. G.A study of Pd-Ta on Si(100) using AES, RBS and variable energy positron annihilation,
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January 1, 1988;
Upton, New York.
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