The two-hit resolution of a silicon drift chamber is measured using a pulsed Nd:Yag laser and a time digitizer readout. The data is analyzed by forming the covariance matrix in time samples, and transforming to a matrix in amplitude and time variation of each of the two hits. The resolution of the two-hit separation is found to be better than 25 microns with a drift field of 530 V/cm and a separation of more than 500 microns, with the resolution increasing to 50 microns as the separation nears 500 microns. Results are also presented for multiply ionizing tracks, showing a …
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The two-hit resolution of a silicon drift chamber is measured using a pulsed Nd:Yag laser and a time digitizer readout. The data is analyzed by forming the covariance matrix in time samples, and transforming to a matrix in amplitude and time variation of each of the two hits. The resolution of the two-hit separation is found to be better than 25 microns with a drift field of 530 V/cm and a separation of more than 500 microns, with the resolution increasing to 50 microns as the separation nears 500 microns. Results are also presented for multiply ionizing tracks, showing a great improvement over single minimum ionizing. 8 refs.
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