Silicon-on ceramic process. Silicon sheet growth and device development for the large-area silicon sheet and cell development tasks of the low-cost solar array project. Quarterly report No. 12, April 2, 1979-June 29, 1979 Page: 62 of 70
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For comparison, Equation (32) was solved with (x) set equal to 300°K, corresponding
to the omission of afterheaters. The boundary conditions on segments 1, 2, and 3 were
the same as^given in the caption for Figure 24 but on segment 4, |dT/3y| = (l/k) f(T,300)
The results are plotted in Figure 26. Note that the rapid downstream cooling causes
drastic variations in both dT/dx and ST/dy near the LSI-meniscus juncture. It is clear
that the linear temperature distribution is completely destroyed.
1000
0.5
x (cm)
1600
T. = 300° K
h- 1200
1000
x (cm)
Figure 26. Two-Dimensional .Temperature Distribution in Silicon Ribbon
. With No Heated Environment. The linear temperature distri-
bution is totally destroyed, indicating that a wedge-shaped
solidification zone is not possible in a cold environment.
52
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Chapman, P.W.; Zook, J.D.; Heaps, J.D.; Grung, B.L.; Koepke, B. & Schuldt, S.B. Silicon-on ceramic process. Silicon sheet growth and device development for the large-area silicon sheet and cell development tasks of the low-cost solar array project. Quarterly report No. 12, April 2, 1979-June 29, 1979, report, July 31, 1979; United States. (https://digital.library.unt.edu/ark:/67531/metadc1065830/m1/62/?rotate=270: accessed July 16, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.