UNT Libraries - 4 Matching Results

Search Results

Results: 1 - 4
Note: All results matching your query require you to be a member of the UNT Community (you must be on campus or login with university credentials for access).

Functionalization and characterization of porous low-κ dielectrics.

Description: The incorporation of fluorine into SiO2 has been shown to reduce the dielectric constant of the existing materials by reducing the electrical polarizability. However, the incorporation of fluorine has also been shown to decrease film stability. Therefore, new efforts have been made to find different ways to further decrease the relative dielectric constant value of the existing low-k materials. One way to reduce the dielectric constant is by decreasing its density. This reduces the amount of p… more
Date: May 2005
Creator: Orozco-Teran, Rosa Amelia
Item Type: Refine your search to only Thesis or Dissertation

Materials properties of ruthenium and ruthenium oxides thin films for advanced electronic applications.

Description: Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few … more
Date: May 2006
Creator: Lim, ChangDuk
Item Type: Refine your search to only Thesis or Dissertation

Study of Conductance Quantization by Cross-Wire Junction

Description: The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the st… more
Date: May 2004
Creator: Zheng, Tao
Item Type: Refine your search to only Thesis or Dissertation

Supercritical Silylation and Stability of Silyl Groups

Description: Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements. Obtaining a low-k dielectric value is critical for the IC industry in order to cope time delay and cross talking issues. These materials exhibit attractive dielectric value, but there are problems replacing conventional SiO2, because of their chemical, mechanical and electrical instability after plasma p… more
Date: May 2006
Creator: Nerusu, Pawan Kumar
Item Type: Refine your search to only Thesis or Dissertation
Back to Top of Screen