Transparent ZnO-based ohmic contact to p-GaN
Description:
Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of {approx}1 x 10{sup -3} {Omega}cm and resulted in ohmic contacts of resistivity {approx}1 x 10{sup -2} {Omega}cm{sup 2} to low-doped p-GaN, and light transmitt…
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Date:
April 9, 2002
Creator:
Kaminska, E.; Piotrowska, A.; Golaszewska, K.; Guziewicz, M.; Kruszka, R.; Kudla, A. et al.
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