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Edge-on ion irradiation of electron microscope specimens

Description: A special technique is described for in situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen. That is, instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction with respect… more
Date: January 1, 1992
Creator: Otero, M. P. & Allen, C. W.
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Partner: UNT Libraries Government Documents Department
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Growth rate of dislocation loop in Fe-Ni-Cr alloy under Kr sup + ion and electron irradiation

Description: In order to examine the effect of irradiating particle species on the growth rate of radiation-induced dislocation loops, a solution-annealed Fe-25Ni-15Cr-0.02C alloy was irradiated at 723 K first by 1.5 MeV Kr{sup +} ions for 2520 sec, then by 1.5 MeV Kr{sup +} ions and 1.0 MeV electrons simultaneously for 780 sec, and finally by 1.0 MeV electrons for 780 sec with the HVEM-Tandem Facility in Argonne National Laboratory. The calculated damage rate by 1.5 MeV Kr{sup +} ions was 5.8 {times} 10{su… more
Date: October 1, 1991
Creator: Kimoto, T. (National Research Inst. for Metals, Tsukuba, Ibaraki (Japan)); Allen, C.W. & Rehn, L.E. (Argonne National Lab., IL (United States))
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Partner: UNT Libraries Government Documents Department
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Anisotropic dislocation loop nucleation in ion-irradiated MgAl sub 2 O sub 4

Description: Polycrystalline disks of stoichiometric magnesium aluminate spinel (MgAl{sub 2}O{sub 4}) were irradiated with 2 MeV Al{sup +} ions at 650{degrees}C and subsequently analyzed in cross-section using transmission electron microscopy (TEM). Interstitial dislocation loops were observed on 110 and 11 habit planes. The population of loops on both sets of habit planes was strongly dependent on their orientation with respect to the ion beam direction. The density of loops with habit plane normals nearly… more
Date: January 1, 1991
Creator: Zinkle, S. J.
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Partner: UNT Libraries Government Documents Department
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Study of the corrosion rate behavior of ion implanted Fe-based alloys

Description: We report on some studies we have made of the time evolution of the corrosion behavior of ion implanted samples of pure iron, medium carbon steel, and 18-8 Cr-Ni stainless steel. Ti, Cr, Ni, Cu, Mo and Yb were implanted at mean ion energies near 100 keV and at doses up to 1 {times} 10{sup 17} cm{sup {minus}2} using a Mevva metal ion implantation facility. A novel feature of this experiment was the simultaneous implantation with several different implanted species. The implanted samples were imm… more
Date: June 1, 1991
Creator: Weiping, Cai; Wei, Tian; Wu Run (Wuhan Iron and Steel Univ., HB (China)); Godechot, X. & Brown, I. (Lawrence Berkeley Lab., CA (United States))
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Partner: UNT Libraries Government Documents Department
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Element/Target-Dependent Release Times and Release Efficiencies for the Proposed OREB Facility

Description: Experiments have been initiated which are designed to measure the time release characteristics of stable ion implanted species from selected refractory target materials which are potential candidates for forming radioactive beans at the proposed Oak Ridge Exotic Beam Facility. In this report, we provide thermal time release data and estimates of the efficiencies for releasing Cl from Zr{sub 5}Si{sub 3} and {sup 75}As, {sup 79}Br, and {sup 78}Se from Zr{sub 5}Ge{sub 3}. 14 refs., 1 fig., 1 tab.
Date: January 1, 1991
Creator: Alton, G. D.; Jones, C. M.; Olsen, D. K.; Carter, H. K. & Kormicki, J.
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Partner: UNT Libraries Government Documents Department
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He self-pumping by tokamak pump limiter materials: Al, V, Ni, and Ni/Al alloys

Description: An ECR plasma and Colutron ion gun were used to study He self-pumping by several possible pump-limiter materials: Ni, V, Al, and Ni/Al multi-layers. Ni and V exhibited similar pumping capacities (6 {times} 10{sup 15} He/cm{sup 2}, 200 eV) whereas Al showed a reduced capacity (6 {times} 10{sup 14} He/cm{sup 2}, 200 eV) due to increased sputtering. A He retention model based upon ion implantation ranges and sputtering rates agreed with the experimental data. The pumping efficiency increased signi… more
Date: January 1, 1991
Creator: Outten, C. A.; Barbour, J. C.; Doyle, B. L. & Walsh, D. S.
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Partner: UNT Libraries Government Documents Department
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The effect of ion irradiation on inert gas bubble mobility

Description: The effect of Al ion irradiation on the mobility of Xe gas bubbles in Al thin films was investigated. Transmission electron microscopy was used to determine bubble diffusivities in films irradiated and/or annealed at 673K, 723K and 773K. Irradiation increased bubble diffusivity by a factor of 2--9 over that due to thermal annealing alone. The Arrhenius behavior and dose rate dependence of bubble diffusivity are consistent with a radiation enhanced diffusion phenomenon affecting a volume diffusi… more
Date: September 1, 1991
Creator: Alexander, D. E. & Birtcher, R. C.
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Partner: UNT Libraries Government Documents Department
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Influence of multi-element ion beam bombardment on the corrosion behavior of iron and steel

Description: The effect of multi-element ion implantation on the corrosion resistance to acid solution has been studied for stainless steel, medium carbon steel, pure iron, and chromium-deposited iron. The implanted elements were Cu, Mo, Cr, Ni, Yb and Ti at doses of each species of from 5 {times} 10{sup 15} to 1 {times} 10{sup 17} cm{sup {minus}2} and at ion energies of up to 100 keV. The stainless steel used was 18-8 Cr-Ni, and the medium carbon steel was 0.45% C. The implanted samples were soaked in dilu… more
Date: June 1, 1991
Creator: Wei, Tian; Run, Wu; Weiping, Cai; Rutao, Wang (Wuhan Iron and Steel Univ., HB (China)); Godechot, X. & Brown, I. (Lawrence Berkeley Lab., CA (United States))
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Partner: UNT Libraries Government Documents Department
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Evolution of Vacancy Supersaturations in MeV Si Implanted Silicon

Description: High-energy Si implantation into silicon creates a net defect distribution that is characterized by an excess of interstitials near the projected range and a simultaneous excess of vacancies closer to the surface. This defect distribution is due to the spatial separation between the distributions of interstitials and vacancies created by the forward momentum transferred from the implanted ion to the lattice atom. This dissertation investigates the evolution of the near-surface vacancy excess in… more
Date: May 1999
Creator: Venezia, Vincent C.
Item Type: Refine your search to only Thesis or Dissertation
Partner: UNT Libraries
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Solid State Division progress report for period ending September 30, 1990

Description: This report covers research progress in the Solid State Division from April 1, 1989, to September 30, 1990. During this period, division research programs were significantly enhanced by the restart of the High-Flux Isotope Reactor (HFIR) and by new initiatives in processing and characterization of materials.
Date: March 1, 1991
Creator: Green, P. H. & Hinton, L. W. (eds.)
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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PLASMA WINDOW FOR VACUUM - ATMOSPHERE INTERFACE AND FOCUSING LENS OF SOURCES FOR NON-VACUUM MATERIAL MODIFICATION.

Description: Material modifications by ion implantation, dry etching, and micro-fabrication are widely used technologies, all of which are performed in vacuum, since ion beams at energies used in these applications are completely attenuated by foils or by long differentially pumped sections, which ate currently used to interface between vacuum and atmosphere. A novel plasma window, which utilizes a short arc for vacuum-atmosphere interface has been developed. This window provides for sufficient vacuum atmos… more
Date: September 7, 1997
Creator: Hershcovitch, A.
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Partner: UNT Libraries Government Documents Department
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EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations

Description: The electrical activity of as-grown and intentionally decorated misfit dislocations in an epitaxial Si/Si(Ge) heterostructure was examined using the electron beam induced current (EBIC) technique in a scanning electron microscope. Misfit dislocations, which were not visible initially, were subsequently activated either by an unknown processing contaminant or a backside metallic impurity. Passivation of these contaminated dislocations was then studied using low energy deuterium ion implantation … more
Date: January 1, 1991
Creator: Zhou, T. Q.; Buczkowski, A.; Radzimski, Z. J.; Rozgonyi, G. A. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Seager, C. H. & Panitz, J. (Sandia National Labs., Albuquerque, NM (USA))
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Partner: UNT Libraries Government Documents Department
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Ion irradiation effects on a martensitic stainless steel designed for reduced long-life radioactivity

Description: Alloys with reduced long-life radioactivity (low activation alloys) are being developed to increase the acceptability of fusion power. The phase stability and swelling resistance of a 12Cr-6.5Mn-1W-0.3V-0.1C martensitic steel were evaluated by transmission electron microscopy following 3.8 MeV Fe{sup ++} ion irradiation with and without He coimplantation. Ion irradiations were performed at 450{degree}C, 550{degree}C, and 650{degree}C to approximately 10, 20, and 40 dpa. At 550{degree}C, approxi… more
Date: April 1, 1990
Creator: Griffin, R.D. (Wisconsin Univ., Madison, WI (USA). Fusion Technology Inst.); Zinkle, S.J. (Oak Ridge National Lab., TN (USA)); Dodd, R.A.; Kulcinski, G.L. (Wisconsin Univ., Madison, WI (USA)) & Gelles, D.S. (Pacific Northwest Lab., Richland, WA (USA))
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Partner: UNT Libraries Government Documents Department
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Considerations relating to pulsed-beam modification of materials

Description: Ion implantation has been shown to produce unique improvements in the properties of a wide range of materials. This technology has been extensively used for doping of semiconductors, where the required doses and implantation depths are relatively modest and readily achieved with commercial implanters. Other applications of ion implantation currently being pursued at a commercial level include the synthesis of buried second-phase layers in Si and the improvement of metal surface properties such … more
Date: January 1, 1990
Creator: Myers, S. M.; Follstaedt, D. M.; Bourcier, R. J.; Dugger, M. T.; McIntyre, D. C. & Rader, D. J.
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Partner: UNT Libraries Government Documents Department
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Plasma Immersion Surface Modification With Metal Ion Plasma

Description: We describe here a novel technique for surface modification in which metal plasma is employed and by which various blends of plasma deposition and ion implantation can be obtained. The new technique is a variation of the plasma immersion technique described by Conrad and co-workers. When a substrate is immersed in a metal plasma, the plasma that condenses on the substrate remains there as a film, and when the substrate is then implanted, qualitatively different processes can follow, including' … more
Date: April 1, 1991
Creator: Brown, I. G.; Yu, K. M. & Godechot, X.
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Partner: UNT Libraries Government Documents Department
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Interactions of energetic particles and clusters with solids

Description: Ion beams are being applied for surface modifications of materials in a variety of different ways: ion implantation, ion beam mixing, sputtering, and particle or cluster beam-assisted deposition. Fundamental to all of these processes is the deposition of a large amount of energy, generally some keV's, in a localized area. This can lead to the production of defects, atomic mixing, disordering and in some cases, amorphization. Recent results of molecular dynamics computer simulations of energetic… more
Date: December 1, 1990
Creator: Averback, R.S.; Hsieh, Horngming (Illinois Univ., Urbana, IL (USA). Dept. of Materials Science and Engineering); Diaz de la Rubia, T. (Lawrence Livermore National Lab., CA (USA)) & Benedek, R. (Argonne National Lab., IL (USA))
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Partner: UNT Libraries Government Documents Department
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Charge injection properties of iridium oxide films produced on Ti-6Al-4V alloy substrates by ion-beam mixing techniques

Description: The charge injection capabilities of iridium oxide films, as produced on Ti6Al-4V alloy substrates by ion beam mixing techniques, have been investigated. Iridium oxide is a valence change oxide, and therefore has high values of charge injection density upon voltage cycling in electrolytes. Because of this property, iridium oxide films are useful as working elements in neural prostheses. Iridium films of three thicknesses, produced by sputter deposition followed by ion beam mixing, were tested i… more
Date: October 1, 1991
Creator: Williams, J.M. (Oak Ridge National Lab., TN (United States)); Lee, I-S. & Buchanan, R.A. (Tennessee Univ., Knoxville, TN (United States))
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Partner: UNT Libraries Government Documents Department
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Long-wavelength germanium photodetectors by ion implantation

Description: Extrinsic far-infrared photoconductivity in thin high-purity germanium wafers implanted with multiple-energy boron ions has been investigated. Initial results from Fourier transform spectrometer(FTS) measurements have demonstrated that photodetectors fabricated from this material have an extended long-wavelength threshold near 192{mu}m. Due to the high-purity substrate, the ability to block the hopping conduction in the implanted IR-active layer yields dark currents of less than 100 electrons/s… more
Date: November 1, 1990
Creator: Wu, I. C.; Beeman, J. W.; Luke, P. N.; Hansen, W. L. & Haller, E. E.
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Partner: UNT Libraries Government Documents Department
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Study of the Effect of Reactive Element Addition by Implanting Metal Ions in a Pre-Formed Oxide Layer

Description: The influence of ion-implanted Y, Hf, Zr and Cr on the oxidation behavior of a Ni-25 wt % CR alloy at 1000{degrees}C has been investigated. The implantation dosage was 5 {times} 10{sup 16} ions/cm{sup 2}. Two methods of implantation have been used. One was to implant ions directly into a clean alloy surface; the other was to implant into an approximately 0.6 {mu}m thick Cr{sub 2}O{sub 3} layer formed at 1000{degrees}C on the alloy. In neither case did the Cr implantation show any beneficial eff… more
Date: September 1, 1990
Creator: Hou, P. Y.; Brown, I. G. & Stringer, J.
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Partner: UNT Libraries Government Documents Department
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Novel metal ion surface modification technique

Description: We describe a method for applying metal ions to the near-surface region of solid materials. The added species can be energetically implanted below the surface or built up as a surface film with an atomically mixed interface with the substrate; the metal ion species can be the same as the substrate species or different from it, and more than one kind of metal species can be applied, either simultaneously or sequentially. Surface structures can be fabricated, including coatings and thin films of … more
Date: October 1, 1990
Creator: Brown, I.G.; Godechot, X. & Yu, K.M.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
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TEM study of flux pinning defects in YBa sub 2 Cu sub 3 O sub 7-. delta. produced by 580 MeV Sn ion irradiation

Description: Recent studies of high {Tc} superconductors irradiated with high energy heavy ions have indicated that a defect structure is produced which is extremely effective in pinning magnetic flux lines. In attempting to develop models to account for these observations, it is imperative to have a complete characterization of the defects responsible for the property enhancements. Hence, the defect microstructure produced in single crystal YBCO by 580 MeV Sn{sup 30+} irradiation, recently demonstrated to … more
Date: January 1, 1991
Creator: Wheeler, R.; Kirk, M.A.; Brown, R. (Argonne National Lab., IL (United States)); Marwick, A.D.; Civale, L. & Holtzberg, F.H. (International Business Machines Corp., Yorktown Heights, NY (United States). Thomas J. Watson Research Center)
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Partner: UNT Libraries Government Documents Department
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The effect of co-implantation on the electrical activity of implanted carbon in GaAs

Description: We have undertaken a systematic study of the effect of co- implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co- implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C. Once damage was created, maintain… more
Date: November 1, 1991
Creator: Moll, A. J.; Walukiewicz, W.; Yu, K. M.; Hansen, W. L. & Haller, E. E.
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Partner: UNT Libraries Government Documents Department
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Optimal pulse modulator design criteria for plasma source ion implanters

Description: This paper describes what are believed to be the required characteristics of a high-voltage modulator for efficient and optimal ion deposition from the ''Plasma Source Ion Implantation'' (PSII) process. The PSII process is a method to chemically or physically alter and enhance surface properties of objects by placing them in a weakly ionized plasma and pulsing the object with a high negative voltage. The attracted ions implant themselves and form chemical bonds or are interstitially mixed with … more
Date: January 1, 1993
Creator: Reass, W.
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Partner: UNT Libraries Government Documents Department
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Versatile high current metal ion implantation facility

Description: A metal ion implantation facility has been developed with which high current beams of practically all the solid metals of the periodic table can be produced. A multi-cathode, broad beam, metal vapor vacuum arc ion source is used to produce repetitively pulsed metal ion beams at an extraction voltage of up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion-charge state multiplicity, and with a beam current of up to several amperes peak pulsed and several te… more
Date: June 1, 1991
Creator: Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X. & MacGill, R.A.
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Partner: UNT Libraries Government Documents Department
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