Advanced far infrared detector and double donor studies in Ge
Description:
This has application to astronomy and astrophysics. Selenium in Ge has been studied with a doping technique which limits complex formation. Only one ionization level has been found to correspond to selenium, which presumably occupies a substitutional site. This level is extremely unstable and its concentration decreases after annealing at 400C. Future work is planned to anneal the fast neutron damage before much selenium has formed in the {sup 74/76}Ge samples. It is expected that the observed …
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Date:
December 1, 1994
Creator:
Olsen, C.S.
Partner:
UNT Libraries Government Documents Department