Screw dislocations in GaN
Description:
GaN has received much attention over the past few years because of several new applications, including light emitting diodes, blue laser diodes and high-power microwave transistors. One of the biggest problems is a high density of structural defects, mostly dislocations, due to a lack of a suitable lattice-matched substrate since bulk GaN is difficult to grow in large sizes. Transmission Electron Microscopy (TEM) has been applied to study defects in plan-view and cross-sections on samples prepa…
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Date:
February 15, 2002
Creator:
Liliental-Weber, Zuzanna; Jasinski, Jacek B.; Washburn, Jack & O'Keefe, Michael A.
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UNT Libraries Government Documents Department