High Spatial Resolution Radiation Detectors Based on Hydrogenated Amorphous Silicon and Scintillator
Description:
Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n pho…
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Date:
May 1, 1995
Creator:
Jing, T.
Partner:
UNT Libraries Government Documents Department