Improved heteroepitaxial MBE GaN growth with a Ga metal buffer layer
Description:
We demonstrate that the use of pure gallium (Ga) as a buffer layer results in improved crystal quality of GaN epilayers grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. The resulting epilayers show electron Hall mobilities as high as 400 cm 2 /Vs at a background carrier concentration of 4 x 10 17 cm -3 , an outstanding value for an MBE-grown GaN layer on sapphire. Structural properties are also improved; the asymmetric (101) X-ray rocking curve width is drastically reduced w…
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Date:
May 15, 2000
Creator:
Kim, Yihwan; Subramanya, Sudhir G.; Krueger, Joachim; Siegle, Henrik; Shapiro, Noad; Armitage, Robert et al.
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