Advanced amorphous materials for photovoltaic conversion. Annual report, October 1, 1978-September 30, 1979
Description:
The objectives of this project are twofold: (1) to investigate new amorphous semiconductor (a-SC) materials, in which recombination centers are passivated, using plasma deposition techniques; and (2) to characterize the optoelectronic properties pertaining to both majority-carrier and minority-carrier transport in as-deposited films and in devices. The electronic properties of plasma-deposited a-Si:H alloys were studied as functions of oxygen and nitrogen impurities. Over a wide range of proces…
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Date:
January 1, 1980
Creator:
Griffith, R. W.; Kampas, F. J.; Vanier, P. E. & Hirsch, M. D.
Item Type:
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Partner:
UNT Libraries Government Documents Department