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Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005

Description: This report describes basic issues behind CdTe/CdS cell performance and stability, such as the nature and electronic properties of impurities and defects that control the majority carrier concentration, mechanisms of dopant compensation, recombination processes, their nature and properties, migration and transformation of defects under various processing, stress, and operating conditions. We believe that a better basic understanding of the specific influence of grain boundaries, especially for … more
Date: February 1, 2007
Creator: Kaydanov, V. I. & Ohno, T. R.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress; Annual Technical Report, 1 November 2005 - 31 October 2006

Description: We describe the results of our continuing study of deep electronic states controlling open-circuit voltage in CdTe/CdS thin-film solar cells (Task 1). The study includes: (1) analysis of factors affecting trap signatures derived from admittance spectroscopy and capacitance transients measurements, such as activation-energy capture cross-sections and trap-density estimates, and (2) comparative studies of cells received from four different sources and prepared with significant variations in cell … more
Date: January 1, 2007
Creator: Beach, J.; Seymour, F. H.; Kaydanov, V. I. & Ohno, T. R.
Item Type: Refine your search to only Report
Partner: UNT Libraries Government Documents Department
open access

Barrier to Trap Filling CuIn1-xGaxSe2: Preprint

Description: Voltage pulses of variable length were applied to CuIn1-xGaxSe2/CdS (0< x< 1) junction solar cells. The resulting transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead they follow a simple electrostatic model based on electrostatic charging of traps.
Date: April 1, 2003
Creator: Young, D. L.; Ramanathan, K.; Contreras, M.; Abushama, J. & Crandall, R. S.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Formation and Characterization of CdSxTe1-x Alloys Prepared from Thin Film Couples of CdS and CdTe: Preprint

Description: This conference paper describes the alloying between CdS and CdTe at the CdS/CdTe interface is a function of the growth temperature and post-deposition CdCl2 heat treatment (HT). In devices prepared by different techniques, Te-rich CdSxTe1-x alloys with x= 0.04 to 0.08 have been identified. We present our work on thin-film couples of CdS and CdTe, which can withstand higher level of CdCl2 treatment without the adhesion problems typically encountered in the regular device structure. CdS films wi… more
Date: May 1, 2002
Creator: Dhere, R.; Wu, X.; Albin, D.; Perkins, C.; Moutinho, H. & Gessert, T.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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