Indium phosphide/cadmium sulfide thin-film solar cells. Quarterly technical progress report No. 3, December 1979-April 1980
Description:
Thin films (approx. 1 ..mu..m thick) and large grains (approx. 40 x 40 ..mu..m) of InP were epitaxially deposited on low-cost recrystallized CdS (RXCdS) substrates at 280/sup 0/C by planar reactive deposition. At 380/sup 0/C, a 0.4- to 1.0-..mu..m-thick In-Cd-S transition layer between the InP and the RXCdS degrades the quality of the InP epitaxy. However, p-type InP films were prepared at this temperature by Be-doping and capping the entire RXCdS substrate with InP. Large grains of CdTe (appro…
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Date:
June 1, 1980
Creator:
Zanio, K.
Item Type:
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Partner:
UNT Libraries Government Documents Department