Charge trapping and breakdown in N{sub 2}O oxides
Description:
Nitrided gate oxides have been fabricated by furnace oxidation in N{sub 2}O with and without prior oxidation in O{sub 2}. SIMS nitrogen profiles show a sharp peak at the Si-insulator interface for both processes. Improved breakdown characteristics and reduced oxide damage after irradiation and charge injection are obtained.
Date:
December 1, 1993
Creator:
Saks, N. S.; Ma, D. I. & Fleetwood, D. M.
Item Type:
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