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in creator/contributor: "Ramanathan, K."

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Junction Formation in CuInSe{sub 2} Based Thin Film Devices

The nature of the interface between CuInSe{sub 2} (CIS) and the chemical bath deposited CdS layer has been investigated. We show that heat-treating the absorbers in Cd- or Zn-containing solutions in the presence of ammonium hydroxide sets up a chemical reaction which facilitates an extraction of Cu from the lattice and an in-diffusion of Cd. The characteristics of devices made in this manner suggest that the reaction generates a thin, n-doped region in the absorber. It is quite possible that th… more

Date: November 18, 1998

Creator: Ramanathan, K.; Wiesner, H.; Asher, S.; Bhattacharya, R. N.; Keane, J.; Contreras, M. et al.

Item Type: Article

Partner: UNT Libraries Government Documents Department

open access

Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution

Junction formation in CuInSe2 (CIS) has been studied by exposing thin films and single-crystal samples to solutions containing NH4OH and CdSO4. The treated samples were analyzed by secondary ion mass spectrometry to determine the amount and distribution of Cd deposited on the surface of the films. Cadmium is found to react with the surface for all the solution exposure times and temperatures studied. The reaction rapidly approaches the endpoint and remains relatively unchanged for subsequent so… more

Date: November 19, 1998

Creator: Asher, S. E.; Ramanathan, K.; H., Wiesner; Moutinho, H. (National Renewable Energy Laboratory) & Niles, D. W. (Hewlett-Packard Corporation)