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Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings

Description: The generation of a nonequilibrium population of optical phonons by photoexcited hot electrons in semiconductor quantum wells is investigated theoretically. The microscopic model of electron-phonon interaction proposed by Huang and Zhu has been used to compute the distributions of confined longitudinal optical phonons and interface modes in GaAs/AlAs quantum wells as a function of well width. Experimental tests of the calculated distributions by Raman scattering are discussed.
Date: November 1, 1991
Creator: Wald, K.R.; Kim, Dai-sik & Yu, P.Y.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Competing electron-electron/electron-phonon interactions and polyacetylene

Description: Using Lanczos exact diagonalization, we investigate the effects of the competition between the electro-electron and electron-phonon interactions in the context of the 1-D tight-binding Peierls-Hubbard Hamiltonian, studying various structural, optical, and vibrational properties of strongly correlated systems. We use polyacetylene as our experimental guide, and perform a parameter space search to determine the level at which a unique set of parameters can model this prototypical conducting polym… more
Date: April 8, 1991
Creator: Gammel, J.T. (Los Alamos National Lab., NM (USA) Bayreuth Univ. (Germany, F.R.). Physics Inst.); Campbell, D.K. (Los Alamos National Lab., NM (USA)) & Loh, E.Y. Jr. (Thinking Machines Corp., Cambridge, MA (USA))
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
open access

Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings

Description: The generation of a nonequilibrium population of optical phonons by photoexcited hot electrons in semiconductor quantum wells is investigated theoretically. The microscopic model of electron-phonon interaction proposed by Huang and Zhu has been used to compute the distributions of confined longitudinal optical phonons and interface modes in GaAs/AlAs quantum wells as a function of well width. Experimental tests of the calculated distributions by Raman scattering are discussed.
Date: November 1, 1991
Creator: Wald, K. R.; Kim, Dai-sik & Yu, P. Y.
Item Type: Refine your search to only Article
Partner: UNT Libraries Government Documents Department
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