Selectivity Failure in the Chemical Vapor Deposition of Tungsten
Description:
Tungsten metal is used as an electrical conductor in many modern microelectronic devices. One of the primary motivations for its use is that it can be deposited in thin films by chemical vapor deposition (CVD). CVD is a process whereby a thin film is deposited on a solid substrate by the reaction of a gas-phase molecular precursor. In the case of tungsten chemical vapor deposition (W-CVD) this precursor is commonly tungsten hexafluoride (WF6) which reacts with an appropriate reductant to yield …
more
Date:
August 1994
Creator:
Cheek, Roger W. (Roger Warren)
Partner:
UNT Libraries